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AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony 259 specifications). AON5802L is a Green Product ordering option. AON5802 and AON5802L are electrically identical.
Features
VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 m (VGS = 10V) RDS(ON) < 20 m (VGS = 4.5V) RDS(ON) < 22 m (VGS = 4.0V) RDS(ON) < 24 m (VGS = 3.1V) RDS(ON) < 30 m (VGS = 2.5V) ESD Rating: 2000V HBM
S2 G2 D
S1
Top View
G1
Bottom View
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain . Current RJA=75C/W TA=70C C Pulsed Drain Current Power Dissipation RJA=75C/W
A
Maximum 30 12 8 6 45 1.7 1.0 -55 to 150
Units V
ID IDM PDSM TJ, TSTG
A
TA=25C TA=70C
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Lead
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 30 61 4.5
Max 40 75 6
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AON5802
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=8A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=4.0V, ID=4A VGS=3.1V, ID=4A VGS=2.5V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A 0.5 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 12 0.6 30 14 23 17 18 20 23 37 0.76 0.9 4.5 869 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 129 104 1.5 10.7 VGS=4.5V, VDS=15V, ID=8A 2.1 4.3 3.4 VGS=10V, VDS=15V, RL=1.25, RGEN=3 IF=8A, dI/dt=100A/s 11.2 27.2 6.7 24.6 12.9 17 28 20 22 24 30 S V A pF pF pF nC nC nC ns ns ns ns ns nC m 1 1.5 Min 30 1 5 10 Typ Max Units V A A V V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev2: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON5802
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 40 Normalized On-Resistance VGS=2.5V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=8A 50 40 30 20 10 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=10V ID=8A VGS=4.5V ID=6A 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics VGS=2V 5 10V 20 2.5V 3V 4V ID(A) 15 VDS=5V
10 125C 25C
30 RDS(ON) (m)
20
VGS=2.5V ID=3A
10
VGS=10V
0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
60
Alpha & Omega Semiconductor, Ltd.
RDS(ON) (m)
AON5802
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 9 8 7 VGS (Volts) 6 5 4 3 2 1 0 0 4 8 12 16 20 24 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 10s Power (W) 100s 1ms 1.0 DC TJ(Max)=150C, TA=25C 0.1 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJC Normalized Transient Thermal Resistance 10ms 100ms 1s 10s 100 200 160 120 80 40 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) TJ(Max)=150C TA=25C VDS=15V ID=8A Capacitance (pF) 1600 1400 1200 1000 800 600 400 200 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss
10.0 ID (Amps)
D=Ton/T TJ,PK=TC+PDM.ZJC.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton T 100 1000
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.

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